CPH3461 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CPH3461
   Código: LT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.3 V
   Qgⓘ - Carga de la puerta: 2.1 nC
   trⓘ - Tiempo de subida: 7.3 nS
   Cossⓘ - Capacitancia de salida: 8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6.5 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET CPH3461

CPH3461 Datasheet (PDF)

..1. Size:462K onsemi
cph3461.pdf

CPH3461 Power MOSFET www.onsemi.com 250V, 6.5, 350mA, Single N-Channel Features On-Resistance RDS(on)1=5 (typ) ESD Diode - Protected Gate 2.5V Drive Low Ciss and High Speed Switching Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 25

8.1. Size:455K onsemi
cph3462.pdf

Ordering number : ENA2322A CPH3462 Power MOSFET http://onsemi.com 100V, 785m, 1A, Single N-Channel Features On-resistance RDS(on)1=590m (typ) Halogen free compliance 4V drive Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain Current

9.1. Size:377K sanyo
cph3448.pdf

CPH3448Ordering number : ENA1648SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3448ApplicationsFeatures 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 12 VDrain Current (DC) I

9.2. Size:110K sanyo
cph3403.pdf

Ordering number:EN5985N-Channel MOS Silicon FETCPH3403Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152 2.5V drive.[CPH3403]2.90.150.430 to 0.11 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions

9.3. Size:31K sanyo
cph3409.pdf

Ordering number : ENN7123CPH3409N-Channel Silicon MOSFETCPH3409Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3409]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

9.4. Size:377K sanyo
cph3457.pdf

CPH3457Ordering number : ENA1804SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3457ApplicationsFeatures ON-resistance RDS(on)1=73m (typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Sour

9.5. Size:27K sanyo
cph3413.pdf

Ordering number : ENN6924CPH3413N-Channel Silicon MOSFETCPH3413Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3413]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecificationsSANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Cond

9.6. Size:30K sanyo
cph3417.pdf

Ordering number : ENN7124CPH3417N-Channel Silicon MOSFETCPH3417Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 1.8V drive.[CPH3417]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Cond

9.7. Size:33K sanyo
cph3405.pdf

Ordering number:ENN6416N-Channel Silicon MOSFETCPH3405Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152A 4V drive.[CPH3405]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rati

9.8. Size:35K sanyo
cph3442.pdf

Ordering number : ENA0094 CPH3442N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3442ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 6.5 A

9.9. Size:36K sanyo
cph3430.pdf

Ordering number : ENN8175CPH3430N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3430ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 2 AD

9.10. Size:28K sanyo
cph3408.pdf

Ordering number : ENN6998CPH3408N-Channel Silicon MOSFETCPH3408Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive.[CPH3408]2.90.150.430.051 21.9 1 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol C

9.11. Size:33K sanyo
cph3406.pdf

Ordering number:ENN6417N-Channel Silicon MOSFETCPH3406Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2152A 4V drive.[CPH3406]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rati

9.12. Size:415K sanyo
cph3455.pdf

CPH3455Ordering number : EN8737SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3455ApplicationsFeatures ON-resistance RDS(on)1=80m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source

9.13. Size:27K sanyo
cph3414.pdf

Ordering number : ENN6862CPH3414N-Channel Silicon MOSFETCPH3414Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 4V drive.[CPH3414]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecificationsSANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Condit

9.14. Size:27K sanyo
cph3407.pdf

Ordering number : ENN6997CPH3407N-Channel Silicon MOSFETCPH3407Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3407]2.90.150.430.051 21.9 1 : Gate2 : Source3 : DrainSANYO : CPH3SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condi

9.15. Size:28K sanyo
cph3410.pdf

Ordering number : ENN6777CPH3410N-Channel Silicon MOSFETCPH3410Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2152A 2.5V drive.[CPH3410]2.90.150.430.051 21.91 : Gate2 : Source3 : DrainSpecificationsSANYO : CPH3Absolute Maximum Ratings at Ta=25CParameter Symbol Cond

9.16. Size:376K sanyo
cph3456.pdf

CPH3456Ordering number : ENA1803SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3456ApplicationsFeatures ON-resistance RDS(on)1=54m (typ.) 1.8V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 20 VGate-to-Sour

9.17. Size:35K sanyo
cph3427.pdf

Ordering number : ENN7917 CPH3427N-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH3427ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 100 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 1 ADra

9.18. Size:474K onsemi
cph3459.pdf

Ordering number : ENA2301A CPH3459 Power MOSFET http://onsemi.com 200V, 3.7, 0.5A, Single N-Channel Features On-resistance RDS(on)1=2.8 (typ) Input Capacitance Ciss=90pF (typ) 4V drive Protection Diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Value UnitDrain to Source Voltage V

9.19. Size:431K onsemi
cph3456.pdf

CPH3456 Power MOSFET www.onsemi.com 20V, 71m, 3.5A, Single N-Channel VDSS RDS(on) Max ID MaxFeatures 71 m@4.5V ON-Resistance RDS(on)1=54m (typ) 20V 103 m@2.5V 3.5A 1.8V Drive 156 m@1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25C Unit Parameter Symbol

9.20. Size:1310K cn vbsemi
cph3427-tl.pdf

CPH3427-TLwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested0.240 at VGS = 10 V 2.0 Material categorization:0.250 at VGS = 6 V100 1.8 2.9 nC0.260 at VGS = 4.5 V1.7APPLICATIONS DC/DC Converters Load Switch LED Backlight

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