CPH3462 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH3462
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 2.8 nS
Cossⓘ - Capacitancia de salida: 11.9 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.785 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de CPH3462 MOSFET
- Selecciónⓘ de transistores por parámetros
CPH3462 datasheet
..1. Size:455K onsemi
cph3462.pdf 
Ordering number ENA2322A CPH3462 Power MOSFET http //onsemi.com 100V, 785m , 1A, Single N-Channel Features On-resistance RDS(on)1=590m (typ) Halogen free compliance 4V drive Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS 20 V Drain Current
8.1. Size:462K onsemi
cph3461.pdf
CPH3461 Power MOSFET www.onsemi.com 250V, 6.5 , 350mA, Single N-Channel Features On-Resistance RDS(on)1=5 (typ) ESD Diode - Protected Gate 2.5V Drive Low Ciss and High Speed Switching Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage VDSS 25
9.1. Size:377K sanyo
cph3448.pdf
CPH3448 Ordering number ENA1648 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH3448 Applications Features 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 12 V Drain Current (DC) I
9.2. Size:110K sanyo
cph3403.pdf
Ordering number EN5985 N-Channel MOS Silicon FET CPH3403 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152 2.5V drive. [CPH3403] 2.9 0.15 0.4 3 0 to 0.1 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions
9.3. Size:31K sanyo
cph3409.pdf
Ordering number ENN7123 CPH3409 N-Channel Silicon MOSFET CPH3409 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3409] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
9.4. Size:377K sanyo
cph3457.pdf
CPH3457 Ordering number ENA1804 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH3457 Applications Features ON-resistance RDS(on)1=73m (typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Sour
9.5. Size:27K sanyo
cph3413.pdf
Ordering number ENN6924 CPH3413 N-Channel Silicon MOSFET CPH3413 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3413] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
9.6. Size:30K sanyo
cph3417.pdf
Ordering number ENN7124 CPH3417 N-Channel Silicon MOSFET CPH3417 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 1.8V drive. [CPH3417] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
9.7. Size:33K sanyo
cph3405.pdf
Ordering number ENN6416 N-Channel Silicon MOSFET CPH3405 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3405] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rati
9.8. Size:35K sanyo
cph3442.pdf
Ordering number ENA0094 CPH3442 N-Channel Silicon MOSFET General-Purpose Switching Device CPH3442 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 6.5 A
9.9. Size:36K sanyo
cph3430.pdf
Ordering number ENN8175 CPH3430 N-Channel Silicon MOSFET General-Purpose Switching Device CPH3430 Applications Features Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 2 A D
9.10. Size:28K sanyo
cph3408.pdf
Ordering number ENN6998 CPH3408 N-Channel Silicon MOSFET CPH3408 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3408] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol C
9.11. Size:33K sanyo
cph3406.pdf
Ordering number ENN6417 N-Channel Silicon MOSFET CPH3406 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3406] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rati
9.12. Size:415K sanyo
cph3455.pdf
CPH3455 Ordering number EN8737 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH3455 Applications Features ON-resistance RDS(on)1=80m (typ.) 4V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 35 V Gate-to-Source
9.13. Size:27K sanyo
cph3414.pdf
Ordering number ENN6862 CPH3414 N-Channel Silicon MOSFET CPH3414 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 4V drive. [CPH3414] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condit
9.14. Size:27K sanyo
cph3407.pdf
Ordering number ENN6997 CPH3407 N-Channel Silicon MOSFET CPH3407 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3407] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain SANYO CPH3 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Condi
9.15. Size:28K sanyo
cph3410.pdf
Ordering number ENN6777 CPH3410 N-Channel Silicon MOSFET CPH3410 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2152A 2.5V drive. [CPH3410] 2.9 0.15 0.4 3 0.05 1 2 1.9 1 Gate 2 Source 3 Drain Specifications SANYO CPH3 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Cond
9.16. Size:376K sanyo
cph3456.pdf
CPH3456 Ordering number ENA1803 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device CPH3456 Applications Features ON-resistance RDS(on)1=54m (typ.) 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 V Gate-to-Sour
9.17. Size:35K sanyo
cph3427.pdf
Ordering number ENN7917 CPH3427 N-Channel Silicon MOSFET General-Purpose Switching Device CPH3427 Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 1 A Dra
9.18. Size:474K onsemi
cph3459.pdf
Ordering number ENA2301A CPH3459 Power MOSFET http //onsemi.com 200V, 3.7 , 0.5A, Single N-Channel Features On-resistance RDS(on)1=2.8 (typ) Input Capacitance Ciss=90pF (typ) 4V drive Protection Diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Value Unit Drain to Source Voltage V
9.19. Size:431K onsemi
cph3456.pdf
CPH3456 Power MOSFET www.onsemi.com 20V, 71m , 3.5A, Single N-Channel VDSS RDS(on) Max ID Max Features 71 m @4.5V ON-Resistance RDS(on)1=54m (typ) 20V 103 m @2.5V 3.5A 1.8V Drive 156 m @1.8V Pb-Free, Halogen Free and RoHS Compliance Specifications Electrical Connection N-Channel Absolute Maximum Ratings at Ta = 25 C Unit Parameter Symbol
9.20. Size:1310K cn vbsemi
cph3427-tl.pdf
CPH3427-TL www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 100 % UIS Tested 0.240 at VGS = 10 V 2.0 Material categorization 0.250 at VGS = 6 V 100 1.8 2.9 nC 0.260 at VGS = 4.5 V 1.7 APPLICATIONS DC/DC Converters Load Switch LED Backlight
Otros transistores... CPH3340
, CPH3341
, CPH3362
, CPH3427
, CPH3430
, CPH3442
, CPH3459
, CPH3461
, IRF730
, CPH5852
, CPH5871
, CPH6311
, CPH6411
, CPH6429
, CPH6434
, CPH6635
, CPH6636R
.
History: NDB408A
