CPH6429 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CPH6429
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: CPH6

Búsqueda de reemplazo de MOSFET CPH6429

CPH6429 Datasheet (PDF)

..1. Size:35K sanyo
cph6429.pdf

Ordering number : ENN8081 CPH6429N-Channel Silicon MOSFETCPH6429Ultrahigh-Speed Switching ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 2 ADrain Curr

9.1. Size:95K sanyo
cph6402.pdf

Ordering number:EN5983N-Channel MOS Silicon FETCPH6402Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151 4V drive.[CPH6402]0.152.96 5 40 to 0.11 : Drain1 2 32 : Drain0.953 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at T

9.2. Size:198K sanyo
cph6401.pdf

Ordering number:ENN6152AN-Channel Silicon MOSFETCPH6401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6401]0.152.96 5 40.051 2 31 : Drain0.952 : Drain3 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at T

9.3. Size:488K sanyo
cph6445.pdf

CPH6445Ordering number : ENA1532SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6445ApplicationsFeatures Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 3.5

9.4. Size:31K sanyo
cph6411.pdf

Ordering number : ENN7383CPH6411N-Channl Silicon MOSFETCPH6411Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6411]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSANYO : CPH6SpecificationsAbsolute Maximum

9.5. Size:63K sanyo
cph6444.pdf

Ordering number : ENA1243A CPH6444SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6444ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 4.5 A

9.6. Size:41K sanyo
cph6404.pdf

Ordering number:ENN6338N-Channel Silicon MOSFETCPH6404Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151A 4V drive.[CPH6404]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSANYO : CPH6SpecificationsAbsolute Maximum Ratings at Ta =

9.7. Size:385K sanyo
cph6443.pdf

CPH6443Ordering number : ENA1826SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6443ApplicationsFeatures ON-resistance RDS(on)1=28m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source

9.8. Size:85K sanyo
cph6403.pdf

Ordering number:ENN5990BN-Channel Silicon MOSFETCPH6403Load Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6403]0.152.96 5 40.051 2 3 1 : Drain0.952 : Drain3 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at Ta = 25CP

9.9. Size:41K sanyo
cph6406.pdf

Ordering number:ENN6418N-Channel Silicon MOSFETCPH6406Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151A 4V drive.[CPH6406]0.152.956 40.051 2 30.95 1 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at Ta =

9.10. Size:35K sanyo
cph6434.pdf

Ordering number : ENA0443 CPH6434SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6434ApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)

9.11. Size:267K sanyo
cph6442.pdf

Ordering number : ENA1242 CPH6442SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6442ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 6 ADr

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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