CPH6434 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CPH6434
Código: ZL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.6 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 0.4 V
Carga de la puerta (Qg): 7 nC
Tiempo de subida (tr): 78 nS
Conductancia de drenaje-sustrato (Cd): 125 pF
Resistencia entre drenaje y fuente RDS(on): 0.041 Ohm
Paquete / Cubierta: CPH6
Búsqueda de reemplazo de MOSFET CPH6434
CPH6434 Datasheet (PDF)
cph6434.pdf
Ordering number : ENA0443 CPH6434SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6434ApplicationsFeatures Ultrahigh-speed switching. 1.8V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 30 VGate-to-Source Voltage VGSS 10 VDrain Current (DC)
cph6402.pdf
Ordering number:EN5983N-Channel MOS Silicon FETCPH6402Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151 4V drive.[CPH6402]0.152.96 5 40 to 0.11 : Drain1 2 32 : Drain0.953 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at T
cph6401.pdf
Ordering number:ENN6152AN-Channel Silicon MOSFETCPH6401Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6401]0.152.96 5 40.051 2 31 : Drain0.952 : Drain3 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at T
cph6445.pdf
CPH6445Ordering number : ENA1532SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6445ApplicationsFeatures Low ON-resistance. 4V drive.Specifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 3.5
cph6411.pdf
Ordering number : ENN7383CPH6411N-Channl Silicon MOSFETCPH6411Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6411]0.152.956 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSANYO : CPH6SpecificationsAbsolute Maximum
cph6444.pdf
Ordering number : ENA1243A CPH6444SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6444ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 4.5 A
cph6429.pdf
Ordering number : ENN8081 CPH6429N-Channel Silicon MOSFETCPH6429Ultrahigh-Speed Switching ApplicationsFeatures Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 10 VDrain Current (DC) ID 2 ADrain Curr
cph6404.pdf
Ordering number:ENN6338N-Channel Silicon MOSFETCPH6404Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151A 4V drive.[CPH6404]0.152.96 5 40.051 2 30.951 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSANYO : CPH6SpecificationsAbsolute Maximum Ratings at Ta =
cph6443.pdf
CPH6443Ordering number : ENA1826SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6443ApplicationsFeatures ON-resistance RDS(on)1=28m (typ.) 4V drive Halogen free complianceSpecifications at Ta=25CAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 35 VGate-to-Source
cph6403.pdf
Ordering number:ENN5990BN-Channel Silicon MOSFETCPH6403Load Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2151A 2.5V drive.[CPH6403]0.152.96 5 40.051 2 3 1 : Drain0.952 : Drain3 : Gate4 : Source5 : Drain6 : Drain0.4SANYO : CPH6SpecificationsAbsolute Maximum Ratings at Ta = 25CP
cph6406.pdf
Ordering number:ENN6418N-Channel Silicon MOSFETCPH6406Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2151A 4V drive.[CPH6406]0.152.956 40.051 2 30.95 1 : Drain2 : Drain3 : Gate4 : Source5 : Drain0.46 : DrainSpecificationsSANYO : CPH6Absolute Maximum Ratings at Ta =
cph6442.pdf
Ordering number : ENA1242 CPH6442SANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching DeviceCPH6442ApplicationsFeatures Low ON-resistance. 4V drive.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 60 VGate-to-Source Voltage VGSS 20 VDrain Current (DC) ID 6 ADr
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
