NCV8402A Todos los transistores

 

NCV8402A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCV8402A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 8.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 42 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 14 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: SOT-223
 

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NCV8402A Datasheet (PDF)

 ..1. Size:92K  onsemi
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NCV8402A

NCV8402, NCV8402ASelf-Protected Low SideDriver with Temperatureand Current LimitNCV8402/A is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,www.onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSautomotive environm

 0.1. Size:118K  onsemi
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NCV8402A

NCV8402D, NCV8402ADDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D/AD is a dual protected Low-Side Smart Discrete device.The protection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suita

 7.1. Size:152K  onsemi
ncv8402.pdf pdf_icon

NCV8402A

NCV8402Self-Protected Low SideDriver with Temperatureand Current LimitNCV8402 is a three terminal protected Low-Side Smart Discretedevice. The protection features include overcurrent, overtemperature,http://onsemi.comESD and integrated Drain-to-Gate clamping for overvoltageprotection. This device offers protection and is suitable for harshV(BR)DSSRDS(ON) TYPID MAX(Clampe

 7.2. Size:147K  onsemi
ncv8402d.pdf pdf_icon

NCV8402A

NCV8402DDual Self-ProtectedLow-Side Driver withTemperature and CurrentLimithttp://onsemi.comNCV8402D is a dual protected Low-Side Smart Discrete device. Theprotection features include overcurrent, overtemperature, ESD andV(BR)DSSintegrated Drain-to-Gate clamping for overvoltage protection. This RDS(ON) TYPID MAX(Clamped)device offers protection and is suitable for harsh

Otros transistores... N0602N , N0603N , N0604N , N2500N , NCE15H15T , NCV8401A , NCV8401ADTRKG , NCV8401DTRKG , IRF9540 , NCV8402AD , NCV8402ASTT1G , NCV8403A , NCV8405A , NCV8406A , NCV8408 , NCV8440A , NDB410AE .

History: 2SK1009 | HFB1N70S | EFC2K107NUZ | FS16SM-6 | BLS70R180-W | P0780ATFS | AP65SL600AR

 

 
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