NCV8405A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCV8405A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 42 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 14 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: TO-252 SOT-223

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NCV8405A datasheet

 ..1. Size:136K  onsemi
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NCV8405A

NCV8405, NCV8405A Self-Protected Low Side Driver with Temperature and Current Limit NCV8405/A is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments. V(BR)DSS RDS(ON) TYP

 7.1. Size:136K  onsemi
ncv8405.pdf pdf_icon

NCV8405A

NCV8405 Self-Protected Low Side Driver with Temperature and Current Limit NCV8405 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device is suitable for harsh automotive environments. V(BR)DSS RDS(ON) TYP ID MAX (Cla

 8.1. Size:122K  onsemi
ncv8401.pdf pdf_icon

NCV8405A

NCV8401 Self-Protected Low Side Driver with Temperature and Current Limit NCV8401 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh automotive VDSS ID MAX (Clamped) RDS(

 8.2. Size:152K  onsemi
ncv8402.pdf pdf_icon

NCV8405A

NCV8402 Self-Protected Low Side Driver with Temperature and Current Limit NCV8402 is a three terminal protected Low-Side Smart Discrete device. The protection features include overcurrent, overtemperature, http //onsemi.com ESD and integrated Drain-to-Gate clamping for overvoltage protection. This device offers protection and is suitable for harsh V(BR)DSS RDS(ON) TYP ID MAX (Clampe

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