NP180N04TUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NP180N04TUK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 348 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 198 nC
   trⓘ - Tiempo de subida: 22 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00105 Ohm
   Paquete / Cubierta: TO-263-7

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NP180N04TUK Datasheet (PDF)

..1. Size:245K renesas
np180n04tuk.pdf

Preliminary Data Sheet R07DS0542EJ0100NP180N04TUK Rev.1.00Sep 23, 2011MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.05 m MAX. ( VGS = 10 V, ID = 90 A ) Low Ciss: Ciss = 10500 pF TYP. ( VDS = 25 V ) Designed

4.1. Size:212K renesas
np180n04tuj.pdf

Preliminary Data Sheet R07DS0180EJ0100NP180N04TUJ Rev.1.00Dec 17, 2010MOS FIELD EFFECT TRANSISTOR Description The NP180N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 1.5 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut

4.2. Size:305K renesas
np180n04tug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.1. Size:209K renesas
np180n055tuj.pdf

Preliminary Data Sheet NP180N055TUJ R07DS0181EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 22, 2010Description The NP180N055TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 2.3 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 9500 pF TYP. (VDS = 25 V) Designed for aut

7.2. Size:102K renesas
np180n055tuk.pdf

Preliminary Data Sheet NP180N055TUK R07DS0593EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP180N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 1.40 m MAX. (VGS = 10 V, ID = 90 A) Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V) Designed fo

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Liste

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