SML50C13N Todos los transistores

 

SML50C13N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML50C13N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1430 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO254

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SML50C13N datasheet

 7.1. Size:20K  semelab
sml50c15.pdf pdf_icon

SML50C13N

SML50C15 TO 254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 6.32 (0.249) N CHANNEL 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) Dia. 3.78 (0.149) 1.27 (0.050) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 500V 1 2 3 ID(cont) 15A RDS(on) 0.270 0.89 (0.035) Faster Switching 1.14 (0.045) 3.81 (0.150) 3.81 (0.150) BSC Lower Leakage BSC

 9.1. Size:20K  semelab
sml50a19.pdf pdf_icon

SML50C13N

SML50A19 TO 3 Package Outline. Dimensions in mm (inches) N CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 500V 1 2 ID(cont) 18.5A 3 (case) RDS(on) 0.240 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Faster Switching Lower Leakage Pin 1

 9.2. Size:21K  semelab
sml50b26.pdf pdf_icon

SML50C13N

SML50B26 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 26A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.200 2.21

 9.3. Size:601K  semelab
sml50hb06.pdf pdf_icon

SML50C13N

SML50HB06 Attributes -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 V Vce DC Collector Current Tc=80C Ic, nom 50 A Tc=25C Ic 75 Repetitive peak Collector Cur- tp=1msec,Tc=80C Icrm 100 A rent Total PowerDissipation Tc=25C Ptot 280 W Gate-emitte

Otros transistores... SML5085GN , SML50A15 , SML50A19 , SML50A21 , SML50B20 , SML50B22 , SML50B26 , SML50B30 , IRF9640 , SML50C14 , SML50H19 , SML50H24 , SML50J44 , SML50J50 , SML50J77 , SML50L37 , SML50L47 .

 

 

 


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