NP32N055IDE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP32N055IDE  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 66 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 32 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: TO-252

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NP32N055IDE datasheet

 ..1. Size:288K  renesas
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NP32N055IDE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:289K  renesas
 np32n055hle np32n055ile np32n055sle.pdf pdf_icon

NP32N055IDE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.2. Size:287K  renesas
 np32n055hhe np32n055ihe np32n055she.pdf pdf_icon

NP32N055IDE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.3. Size:1348K  cn vbsemi
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NP32N055IDE

NP32N055I www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise not

MOSTRAR MÁS

Otros transistores... NP22N055SHE, NP22N055SLE, NP23N06YDG, NP28N10SDE, NP30N04QUK, NP32N055HDE, NP32N055HHE, NP32N055HLE, IRF530, NP32N055IHE, NP32N055ILE, NP32N055SDE, NP32N055SHE, NP32N055SLE, NP33N06YDG, NP33N075YDF, NP34N055HHE