NP34N055HHE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP34N055HHE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 88 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 34 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm

Encapsulados: TO-251

 Búsqueda de reemplazo de NP34N055HHE MOSFET

- Selecciónⓘ de transistores por parámetros

 

NP34N055HHE datasheet

 ..1. Size:287K  renesas
 np34n055hhe np34n055ihe np34n055she.pdf pdf_icon

NP34N055HHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:289K  renesas
 np34n055hle np34n055ile np34n055sle.pdf pdf_icon

NP34N055HHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... NP32N055IDE, NP32N055IHE, NP32N055ILE, NP32N055SDE, NP32N055SHE, NP32N055SLE, NP33N06YDG, NP33N075YDF, IRF1405, NP34N055HLE, NP34N055IHE, NP34N055ILE, NP34N055SHE, NP34N055SLE, NP35N04YLG, NP35N04YUG, NP35N055YUK