NP36N055SHE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP36N055SHE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO-252

 Búsqueda de reemplazo de NP36N055SHE MOSFET

- Selecciónⓘ de transistores por parámetros

 

NP36N055SHE datasheet

 ..1. Size:281K  renesas
 np36n055hhe np36n055ihe np36n055she.pdf pdf_icon

NP36N055SHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:282K  renesas
 np36n055hle np36n055ile np36n055sle.pdf pdf_icon

NP36N055SHE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:250K  renesas
 np36n10sde.pdf pdf_icon

NP36N055SHE

Preliminary Data Sheet R07DS0508EJ0100 NP36N10SDE Rev.1.00 Sep 21, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 m MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss Ciss = 3500

Otros transistores... NP34N055SLE, NP35N04YLG, NP35N04YUG, NP35N055YUK, NP36N055HHE, NP36N055HLE, NP36N055IHE, NP36N055ILE, AOD4184A, NP36N055SLE, NP36N10SDE, NP36P04KDG, NP36P04SDG, NP36P06KDG, NP36P06SLG, NP40N055CHE, NP40N055CLE