NP36N10SDE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NP36N10SDE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 142 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 36 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 230 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: TO-252

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NP36N10SDE datasheet

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NP36N10SDE

Preliminary Data Sheet R07DS0508EJ0100 NP36N10SDE Rev.1.00 Sep 21, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP36N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on)1 = 33 m MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 39 m MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss Ciss = 3500

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NP36N10SDE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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NP36N10SDE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... NP35N04YUG, NP35N055YUK, NP36N055HHE, NP36N055HLE, NP36N055IHE, NP36N055ILE, NP36N055SHE, NP36N055SLE, 60N06, NP36P04KDG, NP36P04SDG, NP36P06KDG, NP36P06SLG, NP40N055CHE, NP40N055CLE, NP40N055DHE, NP40N055DLE