NP40N055MLE Todos los transistores

 

NP40N055MLE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NP40N055MLE
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 66 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: TO-220
     - Selección de transistores por parámetros

 

NP40N055MLE Datasheet (PDF)

 ..1. Size:293K  renesas
 np40n055cle np40n055dle np40n055ele np40n055kle np40n055mle np40n055nle.pdf pdf_icon

NP40N055MLE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.1. Size:291K  renesas
 np40n055che np40n055dhe np40n055ehe np40n055khe np40n055mhe np40n055nhe.pdf pdf_icon

NP40N055MLE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:153K  renesas
 np40n10pdf np40n10vdf np40n10ydf.pdf pdf_icon

NP40N055MLE

Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF R07DS0361EJ0201100 V 40 A N-channel Power MOS FET Rev.2.01Application: Automotive May 13, 2013Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Low on-state resistance RDS(on) = 25 m MAX. (VGS = 10 V, ID = 20 A) (NP40N10Y

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History: 10N65KG-TF3-T | 11P50A | IPI08CNE8NG

 

 
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