NP60N04HLF Todos los transistores

 ..1. Size:276K  renesas
 np60n04hlf np60n04ilf.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.1. Size:274K  renesas
 np60n04kug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.2. Size:315K  renesas
 np60n04mug.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 7.3. Size:102K  renesas
 np60n04muk np60n04nuk.pdf

Preliminary Data Sheet NP60N04MUK, NP60N04NUK R07DS0597EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF TYP. (VDS = 25 V) Des

 7.4. Size:105K  renesas
 np60n04vdk.pdf

Preliminary Data Sheet NP60N04VDK R07DS1014EJ0100 40 V 60 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF

 7.5. Size:104K  renesas
 np60n04pdk.pdf

Preliminary Data Sheet NP60N04PDK R07DS1013EJ0100 40 V 60 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF

 7.6. Size:101K  renesas
 np60n04vuk.pdf

Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 24, 2011 Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF TYP. (VDS = 25 V) Designed for aut