IXFP36N20X3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXFP36N20X3 Datasheet (PDF)

..1. Size:310K ixys
ixfy36n20x3 ixfa36n20x3 ixfp36n20x3.pdf pdf_icon

VDSS = 200VX3-Class HiPERFETTM IXFY36N20X3ID25 = 36APower MOSFETIXFA36N20X3 RDS(on) 45m IXFP36N20X3N-Channel Enhancement ModeTO-252 (IXFY)G SD (Tab)TO-263 (IXFA)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 200 VGSVDGR TJ = 25C to 150C, RGS = 1M 200 VD (Tab)VGSS Continuous 20 VTO-220

0.1. Size:184K ixys
ixfp36n20x3m.pdf pdf_icon

Preliminary Technical InformationX3-Class HiPerFETTM VDSS = 200VIXFP36N20X3MPower MOSFET ID25 = 36A RDS(on) 45m (Electrically Isolated Tab)OVERMOLDEDTO-220N-Channel Enhancement ModeSymbol Test Conditions Maximum RatingsGIsolated TabDVDSS TJ = 25C to 150C 200 V SVDGR TJ = 25C to 150C, RGS = 1M 200 VG = Gate D =

0.2. Size:254K inchange semiconductor
ixfp36n20x3m.pdf pdf_icon

isc N-Channel MOSFET Transistor IXFP36N20X3MFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

7.1. Size:155K ixys
ixfa36n30p3 ixfp36n30p3.pdf pdf_icon

Preliminary Technical InformationPolar3 TM HiPerFETTM VDSS = 300VIXFA36N30P3Power MOSFET ID25 = 36AIXFP36N30P3 RDS(on) 110m N-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-263AA (IXFA)GSSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 300 VTO-220AB (IXFP)VDGR TJ = 25C to 150

Otros transistores... IRL60SL216 , IXFA56N30X3 , IXFP56N30X3 , IXFA12N65X2 , IXFH12N65X2 , IXFA8N85XHV , IXFP8N85X , IXFA36N20X3 , 4N60 , IXTP12N70X2 , VN1204N5 , VN1210N5 , VN1204N1 , VN1206N1 , VN1210N1 , VN1204N2 , VN1206N2 .