VN1204N2 Todos los transistores

 

VN1204N2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: VN1204N2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 6.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 V
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-39

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VN1204N2 Datasheet (PDF)

 9.1. Size:544K  supertex
vn1206.pdf

VN1204N2
VN1204N2

Supertex inc. VN1206N-Channel Enhancement-ModeVertical DMOS FETFeatures General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertexs well-proven, Low power drive requirementsilicon-gate manufacturing process. This combination Ease of parallelingproduces a device with the power h

 9.2. Size:756K  fuji
7mbr75vn120-50.pdf

VN1204N2
VN1204N2

7MBR75VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 75A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless o

 9.3. Size:426K  fuji
7mbr50vn120-50.pdf

VN1204N2
VN1204N2

http://www.fujielectric.com/products/semiconductor/7MBR50VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 50A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteris

 9.4. Size:768K  fuji
7mbr150vn120-50.pdf

VN1204N2
VN1204N2

7MBR150VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 150A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

 9.5. Size:748K  fuji
7mbr100vn120-50.pdf

VN1204N2
VN1204N2

7MBR100VN120-50 IGBT ModulesIGBT MODULE (V series)1200V / 100A / PIMFeaturesLow V (sat)CECompact PackageP.C.Board Mount ModuleConverter Diode Bridge Dynamic Brake CircuitRoHS compliant productApplicationsInverter for Motor DriveAC and DC Servo Drive AmplifierUninterruptible Power SupplyMaximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25C unless

 9.6. Size:259K  inchange semiconductor
vn1206n5.pdf

VN1204N2
VN1204N2

isc N-Channel MOSFET Transistor VN1206N5FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

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