NP60N055KUG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NP60N055KUG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 88 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 60 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 44 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0094 Ohm
Encapsulados: TO-263
Búsqueda de reemplazo de NP60N055KUG MOSFET
- Selecciónⓘ de transistores por parámetros
NP60N055KUG datasheet
..1. Size:260K renesas
np60n055kug.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
6.1. Size:102K renesas
np60n055vuk.pdf 
Preliminary Data Sheet NP60N055VUK R07DS0588EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Dec 12, 2011 Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2500 pF TYP. (VDS = 25 V) Designed for au
6.2. Size:103K renesas
np60n055muk np60n055nuk.pdf 
Preliminary Data Sheet NP60N055MUK, NP60N055NUK R07DS0598EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2500 pF TYP. (VDS = 25 V) D
8.1. Size:274K renesas
np60n04kug.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.2. Size:306K renesas
np60n03sug.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:315K renesas
np60n04mug.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.4. Size:102K renesas
np60n04muk np60n04nuk.pdf 
Preliminary Data Sheet NP60N04MUK, NP60N04NUK R07DS0597EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Jan 11, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF TYP. (VDS = 25 V) Des
8.5. Size:105K renesas
np60n04vdk.pdf 
Preliminary Data Sheet NP60N04VDK R07DS1014EJ0100 40 V 60 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF
8.6. Size:104K renesas
np60n04pdk.pdf 
Preliminary Data Sheet NP60N04PDK R07DS1013EJ0100 40 V 60 A N-channel Power MOS FET Rev.1.00 Application Automotive Feb 21, 2013 Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF
8.7. Size:258K renesas
np60n03kug.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:101K renesas
np60n04vuk.pdf 
Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100 Rev.1.00 MOS FIELD EFFECT TRANSISTOR Nov 24, 2011 Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss Ciss = 2450 pF TYP. (VDS = 25 V) Designed for aut
8.9. Size:276K renesas
np60n04hlf np60n04ilf.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... VN1204N1, VN1206N1, VN1210N1, VN1204N2, VN1206N2, NP60N04PDK, NP60N04VDK, NP60N04VUK, IRF2807, NP60N055MUK, NP60N055NUK, NP60N055VUK, NP70N04MUG, NP70N10KUF, NP74N04YUG, NP75N04VDK, NP75N04VUK