NP60N055VUK Todos los transistores

 

NP60N055VUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NP60N055VUK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 105 W
   Voltaje máximo drenador - fuente |Vds|: 55 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 60 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tiempo de subida (tr): 7 nS
   Conductancia de drenaje-sustrato (Cd): 260 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0055 Ohm
   Paquete / Cubierta: TO-252

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NP60N055VUK Datasheet (PDF)

 ..1. Size:102K  renesas
np60n055vuk.pdf

NP60N055VUK
NP60N055VUK

Preliminary Data Sheet NP60N055VUK R07DS0588EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Dec 12, 2011Description The NP60N055VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.5 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) Designed for au

 6.1. Size:260K  renesas
np60n055kug.pdf

NP60N055VUK
NP60N055VUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 6.2. Size:103K  renesas
np60n055muk np60n055nuk.pdf

NP60N055VUK
NP60N055VUK

Preliminary Data Sheet NP60N055MUK, NP60N055NUK R07DS0598EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 6.0 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2500 pF TYP. (VDS = 25 V) D

 8.1. Size:274K  renesas
np60n04kug.pdf

NP60N055VUK
NP60N055VUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:306K  renesas
np60n03sug.pdf

NP60N055VUK
NP60N055VUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:315K  renesas
np60n04mug.pdf

NP60N055VUK
NP60N055VUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:102K  renesas
np60n04muk np60n04nuk.pdf

NP60N055VUK
NP60N055VUK

Preliminary Data Sheet NP60N04MUK, NP60N04NUK R07DS0597EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Des

 8.5. Size:105K  renesas
np60n04vdk.pdf

NP60N055VUK
NP60N055VUK

Preliminary Data Sheet NP60N04VDK R07DS1014EJ010040 V 60 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP60N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF

 8.6. Size:104K  renesas
np60n04pdk.pdf

NP60N055VUK
NP60N055VUK

Preliminary Data Sheet NP60N04PDK R07DS1013EJ010040 V 60 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP60N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.95 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF

 8.7. Size:258K  renesas
np60n03kug.pdf

NP60N055VUK
NP60N055VUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:101K  renesas
np60n04vuk.pdf

NP60N055VUK
NP60N055VUK

Preliminary Data Sheet NP60N04VUK R07DS0576EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 24, 2011Description The NP60N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.85 m MAX. (VGS = 10 V, ID = 30 A) Low Ciss: Ciss = 2450 pF TYP. (VDS = 25 V) Designed for aut

 8.9. Size:276K  renesas
np60n04hlf np60n04ilf.pdf

NP60N055VUK
NP60N055VUK

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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