NP75N04VUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NP75N04VUK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 220 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de NP75N04VUK MOSFET
NP75N04VUK Datasheet (PDF)
np75n04vuk.pdf

Preliminary Data Sheet NP75N04VUK R07DS0954EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Nov 20, 2012Description The NP75N04VUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF T
np75n04vdk.pdf

Preliminary Data Sheet NP75N04VDK R07DS1015EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP75N04VDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 5.7 m MAX. (VGS = 10 V, ID = 38 A) Low Ciss: Ciss = 1630 pF
np75n04yuk.pdf

Preliminary Data Sheet NP75N04YUK R07DS1004EJ010040 V 75 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 08, 2013Description The NP75N04YUK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 38 A) Non logic level drive typ
np75n04yug.pdf

Preliminary Data Sheet NP75N04YUG R07DS0018EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jul 01, 2010Description The NP75N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Low on-state resistance RDS(on) = 4.8 m MAX. (VGS = 10 V, ID = 37.5 A) Low Ciss: Ciss = 4300 pF TYP. (VDS = 25 V, VGS = 0 V) Designe
Otros transistores... NP60N055KUG , NP60N055MUK , NP60N055NUK , NP60N055VUK , NP70N04MUG , NP70N10KUF , NP74N04YUG , NP75N04VDK , IRF730 , NP75N04YUG , NP75N04YUK , NP75N055YUK , NP75P03YDG , NP75P04YLG , NP80N03CDE , NP80N03CLE , NP80N03DDE .
History: MTE65N20H8 | SRN1860FD | TK7P60W | IRLZ44S | SWI3N90U | STB24N65M2
History: MTE65N20H8 | SRN1860FD | TK7P60W | IRLZ44S | SWI3N90U | STB24N65M2



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