2SK162 Todos los transistores

 

2SK162 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK162

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.4 W

Tensión drenaje-fuente |Vds|: 40 V

Corriente continua de drenaje |Id|: 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 25 Ohm

Empaquetado / Estuche: TO92

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2SK162 Datasheet (PDF)

0.1. 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf Size:515K _1

2SK162

0.2. 2sk1620.pdf Size:90K _renesas

2SK162
2SK162

2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET REJ03G0957-0200 (Previous: ADE-208-1298) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code: PRSS0004AE

 0.3. 2sk1629-e1-e.pdf Size:268K _renesas

2SK162
2SK162

Preliminary Datasheet 2SK1629-E1-E R07DS1197EJ0200500V - 30A - MOS FET Rev.2.00High Speed Power Switching Mar 26, 2014Features Low on-resistance RDS(on) = 0.22 typ. (at ID = 15 A, VGS= 10 V, Ta = 25C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003ZC-A(Package n

0.4. rej03g0958 2sk1623lsds.pdf Size:102K _renesas

2SK162
2SK162

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.5. 2sk1623.pdf Size:89K _renesas

2SK162
2SK162

2SK1623(L), 2SK1623(S) Silicon N Channel MOS FET REJ03G0958-0300 (Previous: ADE-208-1299) Rev.3.00 Jan 10, 2006 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa

0.6. 2sk1626 2sk1627.pdf Size:194K _renesas

2SK162
2SK162

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.7. rej03g0960 2sk1628ds.pdf Size:118K _renesas

2SK162
2SK162

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.8. 2sk1628.pdf Size:82K _renesas

2SK162
2SK162

2SK1628, 2SK1629 Silicon N Channel MOS FET REJ03G0960-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZF-A(Package name: TO-3PL)DG1. Gate2. D

0.9. 2sk162.pdf Size:57K _nec

2SK162
2SK162

0.10. 2sk1623l.pdf Size:218K _inchange_semiconductor

2SK162
2SK162

INCHANGESemiconductorisc N-Channel MOSFET Transistor 2SK1623LFEATURESWith TO-262 packagingHigh speed switchingLow driving powerEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

0.11. 2sk1629.pdf Size:214K _inchange_semiconductor

2SK162
2SK162

isc N-Channel MOSFET Transistor 2SK1629ESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =0) 500 VDSS GSV

Otros transistores... 2SK1588 , 2SK1589 , 2SK1590 , 2SK1591 , 2SK1592 , 2SK1593 , 2SK1594 , 2SK1596 , FDS4435 , 2SK163 , 2SK1664 , 2SK1712 , 2SK1748 , 2SK1749 , 2SK1750 , 2SK1751 , 2SK1752 .

 

 
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