SML50W40 Todos los transistores

 

SML50W40 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML50W40

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 400 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 7400 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: TO267

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SML50W40 datasheet

 ..1. Size:26K  semelab
sml50w40.pdf pdf_icon

SML50W40

SML50W40 TO 267 Package Outline. Dimensions in mm (inches) N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 500V ID(cont) 40A RDS(on) 0.120 Faster Switching Lower Leakage TO 267 Hermetic Package D StarMOS is a new generation of high voltage N Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G increases

 9.1. Size:20K  semelab
sml50a19.pdf pdf_icon

SML50W40

SML50A19 TO 3 Package Outline. Dimensions in mm (inches) N CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 500V 1 2 ID(cont) 18.5A 3 (case) RDS(on) 0.240 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Faster Switching Lower Leakage Pin 1

 9.2. Size:21K  semelab
sml50b26.pdf pdf_icon

SML50W40

SML50B26 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 500V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 26A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.200 2.21

 9.3. Size:601K  semelab
sml50hb06.pdf pdf_icon

SML50W40

SML50HB06 Attributes -aerospace build standard -high reliability -lightweight -metal matrix base plate -AlN isolation Maximum rated values/ Electrical Properties Collector-emitter Voltage 600 V Vce DC Collector Current Tc=80C Ic, nom 50 A Tc=25C Ic 75 Repetitive peak Collector Cur- tp=1msec,Tc=80C Icrm 100 A rent Total PowerDissipation Tc=25C Ptot 280 W Gate-emitte

Otros transistores... SML50J77 , SML50L37 , SML50L47 , SML50M60BFN , SML50S20 , SML50S26 , SML50S30 , SML50T47 , IRF3205 , SML6017AFN , SML601R3AN , SML601R3BN , SML601R3CN , SML601R3GN , SML601R3KN , SML601R6AN , SML601R6BN .

 

 

 


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