SML601R6CN Todos los transistores

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SML601R6CN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML601R6CN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 600 V

Corriente continua de drenaje (Id): 5.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 950 pF

Resistencia drenaje-fuente RDS(on): 1.6 Ohm

Empaquetado / Estuche: TO254

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SML601R6CN Datasheet (PDF)

5.1. sml60h16.pdf Size:26K _semelab

SML601R6CN

SML60H16 TO–258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N–CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 600V ID(cont) 15.5A Ω RDS(on) 0.370Ω 5.08 (0.200) 3.56 (0.140) BSC BSC • Faster Switching 1.65 (0.065) 1.39 (0.055) • Lower

5.2. sml60h20.pdf Size:26K _semelab

SML601R6CN

SML60H20 TO–258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N–CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 600V ID(cont) 20A Ω RDS(on) 0.270Ω 5.08 (0.200) 3.56 (0.140) BSC BSC • Faster Switching 1.65 (0.065) 1.39 (0.055) • Lower Le

5.3. sml60a16.pdf Size:20K _semelab

SML601R6CN

SML60A16 TO–3 Package Outline. Dimensions in mm (inches) N–CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 600V 1 2 ID(cont) 16A 3 (case) Ω RDS(on) 0.350Ω 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) • Faster Switching • Lower Leakage Pin 1

5.4. sml60a18.pdf Size:20K _semelab

SML601R6CN

SML60A18 TO–3 Package Outline. Dimensions in mm (inches) N–CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 600V 1 2 ID(cont) 17.5A 3 (case) Ω RDS(on) 0.320Ω 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) • Faster Switching • Lower Leakage Pin 1

5.5. sml60b25.pdf Size:21K _semelab

SML601R6CN

SML60B25 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 600V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 25A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.250 2.21

5.6. sml60b18.pdf Size:21K _semelab

SML601R6CN

SML60B18 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 600V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 18A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.350 2.21

5.7. sml60l38.pdf Size:20K _semelab

SML601R6CN

SML60L38 TO–264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N–CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 600V 1 2 3 2.29 (0.090) ID(cont) 38A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.150 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0.051) •

5.8. sml60s16.pdf Size:20K _semelab

SML601R6CN

SML60S16 D3PAK Package Outline. Dimensions in mm (inches) N–CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDSS

5.9. sml60w32.pdf Size:26K _semelab

SML601R6CN

SML60W32 TO–267 Package Outline. Dimensions in mm (inches) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS VDSS 600V ID(cont) 31.5A Ω RDS(on) 0.170Ω • Faster Switching • Lower Leakage • TO–267 Hermetic Package D StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, G increas

5.10. sml60j35.pdf Size:24K _semelab

SML601R6CN

SML60J35 SOT–227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N–CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V

5.11. sml60s18.pdf Size:19K _semelab

SML601R6CN

SML60S18 D3PAK Package Outline. Dimensions in mm (inches) N–CHANNEL 4.98 (0.196) 5.08 (0.200) ENHANCEMENT MODE 15.95 (0.628) 13.41 (0.528) 1.47 (0.058) 16.05 (0.632) 13.51 (0.532) 1.04 (0.041) 1.57 (0.062) 1.15 (0.045) HIGH VOLTAGE 11.51 (0.453) POWER MOSFETS 13.79 (0.543) 11.61 (0.457) 13.99 (0.551) 0.46 (0.018) 0.56 (0.022) 1 2 3 3 plcs. 1.27 (0.050) 1.40 (0.055) VDSS

5.12. sml60b21.pdf Size:21K _semelab

SML601R6CN

SML60B21 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 600V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 21A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.300 2.21

5.13. sml60j62.pdf Size:24K _semelab

SML601R6CN

SML60J62 SOT–227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N–CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V

5.14. sml60t38.pdf Size:19K _semelab

SML601R6CN

SML60T38 T247clip Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE 5.38 (0.212) 6.20 (0.244) HIGH VOLTAGE POWER MOSFETS 2 VDSS 600V 1 2 3 2.87 (0.113) ID(cont) 38A 0.40 (0.016) 3.12 (0.123) 0.79 (0.031) 1.65 (0.065) 2.13 (0.084) RDS(on) 0.150 1.01 (0.040) 1.40 (0.055

5.15. sml60b16.pdf Size:21K _semelab

SML601R6CN

SML60B16 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 600V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 16A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.400 2.21

Otros transistores... SML6017AFN , SML601R3AN , SML601R3BN , SML601R3CN , SML601R3GN , SML601R3KN , SML601R6AN , SML601R6BN , IRF630 , SML601R6GN , SML601R6KN , SML6030BN , SML6033BN , SML6040AN , SML6040BN , SML6040HN , SML6045AN .

 


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