NP89N04NUK Todos los transistores

 

NP89N04NUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NP89N04NUK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: TO-262
 

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NP89N04NUK Datasheet (PDF)

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NP89N04NUK

Preliminary Data Sheet NP89N04MUK, NP89N04NUK R07DS0599EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Des

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NP89N04NUK

Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 07, 2011Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Designed for aut

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 np89n04pdk.pdf pdf_icon

NP89N04NUK

Preliminary Data Sheet NP89N04PDK R07DS1016EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF

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 np89n055puk.pdf pdf_icon

NP89N04NUK

Preliminary Data Sheet NP89N055PUK R07DS0569EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for au

MOSTRAR MÁS

Otros transistores... NP88N055NLE , NP88N075CUE , NP88N075DUE , NP88N075EUE , NP88N075KUE , NP88N075MUE , NP88N075NUE , NP89N04MUK , IRFB4110 , NP89N04PDK , NP89N04PUK , NP89N055MUK , NP89N055NUK , NP89N055PUK , NP90N03VHG , NP90N03VLG , NP90N03VUG .

History: HGA098N10S | PSMN9R0-25YLC | STP10NK50Z | STP110N10F7 | PSMN9R0-30YL | RFP12N08 | STP10N105K5

 

 
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