NP89N04PUK Todos los transistores

 

NP89N04PUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NP89N04PUK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 530 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00295 Ohm
   Paquete / Cubierta: TO-263
 

 Búsqueda de reemplazo de NP89N04PUK MOSFET

   - Selección ⓘ de transistores por parámetros

 

NP89N04PUK Datasheet (PDF)

 ..1. Size:103K  renesas
 np89n04puk.pdf pdf_icon

NP89N04PUK

Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 07, 2011Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Designed for aut

 6.1. Size:104K  renesas
 np89n04pdk.pdf pdf_icon

NP89N04PUK

Preliminary Data Sheet NP89N04PDK R07DS1016EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF

 7.1. Size:103K  renesas
 np89n04muk np89n04nuk.pdf pdf_icon

NP89N04PUK

Preliminary Data Sheet NP89N04MUK, NP89N04NUK R07DS0599EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Des

 8.1. Size:102K  renesas
 np89n055puk.pdf pdf_icon

NP89N04PUK

Preliminary Data Sheet NP89N055PUK R07DS0569EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for au

MOSTRAR MÁS

Otros transistores... NP88N075DUE , NP88N075EUE , NP88N075KUE , NP88N075MUE , NP88N075NUE , NP89N04MUK , NP89N04NUK , NP89N04PDK , 10N60 , NP89N055MUK , NP89N055NUK , NP89N055PUK , NP90N03VHG , NP90N03VLG , NP90N03VUG , NP90N04MDH , NP90N04MUG .

History: MPSP60M370 | P0270ATFS | SLD5N65S | NCEP40T13AGU | SPN10T10 | CSD17577Q3A | NCE60NF730I

 

 
Back to Top

 


 
.