NP89N055MUK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NP89N055MUK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0044 Ohm
   Paquete / Cubierta: TO-220

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NP89N055MUK Datasheet (PDF)

..1. Size:103K renesas
np89n055muk np89n055nuk.pdf

Preliminary Data Sheet NP89N055MUK, NP89N055NUK R07DS0600EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) D

6.1. Size:102K renesas
np89n055puk.pdf

Preliminary Data Sheet NP89N055PUK R07DS0569EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 17, 2011Description The NP89N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 4.0 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for au

8.1. Size:103K renesas
np89n04puk.pdf

Preliminary Data Sheet NP89N04PUK R07DS0562EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Nov 07, 2011Description The NP89N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Designed for aut

8.2. Size:103K renesas
np89n04muk np89n04nuk.pdf

Preliminary Data Sheet NP89N04MUK, NP89N04NUK R07DS0599EJ0100Rev.1.00MOS FIELD EFFECT TRANSISTOR Jan 11, 2012Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 3.3 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF TYP. (VDS = 25 V) Des

8.3. Size:104K renesas
np89n04pdk.pdf

Preliminary Data Sheet NP89N04PDK R07DS1016EJ010040 V 90 A N-channel Power MOS FET Rev.1.00Application: Automotive Feb 21, 2013Description The NP89N04PDK is N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 2.95 m MAX. (VGS = 10 V, ID = 45 A) Low Ciss: Ciss = 3900 pF

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History: TMD7N60H

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