NDF08N60ZG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDF08N60ZG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 35 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 129 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
Paquete / Cubierta: TO-220FP
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NDF08N60ZG Datasheet (PDF)
ndf08n60zg ndp08n60zg.pdf

DataSheet.inNDF08N60Z, NDP08N60ZN-Channel Power MOSFET600 V, 0.95 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (MAX) @ 3.5 AABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)600 V0.95 WRating Symbol NDF08N60Z NDP08N60Z UnitDrain-to-Source Voltage
ndf08n60z-d.pdf

NDF08N60Z, NDP08N60ZN-Channel Power MOSFET600 V, 0.95 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (MAX) @ 3.5 AABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)600 V0.95 WRating Symbol NDF08N60Z NDP08N60Z UnitDrain-to-Source Voltage VDSS 600 VN
ndf08n50z ndp08n50z.pdf

NDF08N50Z, NDP08N50ZN-Channel Power MOSFET500 V, 0.69 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (TYP) @ 3.6 AABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)500 V0.69 WRating Symbol NDF08N50Z NDP08N50Z UnitDrain-to-Source Voltage VDSS 500 VN
Otros transistores... JCS4N60BB , JCS4N60CB , JCS4N60FB , LD1014D , ME80N75F , ME80N75FG , MMF60R280QTH , NCE3401AY , AO3407 , NDP08N60ZG , PTF10149 , RJK0234DNS , SPP100N06S2-05 , SPB100N06S2-05 , SSM5N03FE , STK0260D , SWD5N65K .



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