RJK0234DNS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Preliminary Datasheet RJK0234DNS 25V, 35A, 5.8mmax. R07DS1073EJ0130N Channel Power MOS FET Rev.1.30High Speed Power Switching May 23, 2013Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free Outline RENESAS Package code: PVSN0008JD-A(Packag

Preliminary Datasheet RJK0230DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0541EJ0110High Speed Power Switching Rev.1.10Sep 12, 2011Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-B(Package name: WPAK-D(3))2 3 4 9D1 D1 D1S1/D2

Preliminary Datasheet RJK0225DNS R07DS0259EJ0110Silicon N Channel Power MOS FET Rev.1.10Power Switching Mar 03, 2011Features Very High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline Package name: 8pin HVSON(3333)

Preliminary Datasheet RJK0212DPA R07DS0219EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008

Preliminary Datasheet RJK0215DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0207EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A

Preliminary Datasheet RJK0210DPA R07DS0217EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 4.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00

Preliminary Datasheet RJK0223DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0126EJ0030(Previous: REJ03G1952-0020)Rev.0.30Sep 02, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304

Preliminary Datasheet RJK0213DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1942-0100Power Switching Rev.1.00Jun 15, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.85 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENE

Preliminary Datasheet RJK0206DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1923-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.5 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Preliminary Datasheet RJK0202DSP R07DS0238EJ0220Silicon N Channel Power MOS FET Rev.2.20Power Switching Jan 05, 2011Features High speed switching Capable of 2.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.0 m typ. (at VGS = 4.5 V) Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8

Preliminary Datasheet RJK0214DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0206EJ0110High Speed Power Switching Rev.1.10Sep 02, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A

Preliminary Datasheet RJK0211DPA R07DS0218EJ0200Silicon N Channel Power MOS FET Rev.2.00Power Switching Dec 07, 2010Features Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.8 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN00

Preliminary Datasheet RJK0222DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching R07DS0125EJ0030(Previous: REJ03G1951-0020)Rev.0.30Sep 06, 2010Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008JD-A(Package name: HWSON304

Preliminary Datasheet RJK0204DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1922-0210Power Switching Rev.2.10Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Preliminary Datasheet RJK0208DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1924-0200Power Switching Rev.2.00Apr 27, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.6 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENES

Preliminary Datasheet RJK0216DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0208EJ0110High Speed Power Switching Rev.1.10Sep 05, 2011Applications DC-DC conversion for PC and Server. Features Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DD-A

Preliminary Datasheet RJK0226DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching R07DS0260EJ0110Rev.1.10Mar 03, 2011Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.3 m typ. (at VGS = 8 V) Pb-free Halogen-free Outline Packag