VN10KLS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VN10KLS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 0.31 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 16 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 7.5 Ohm
Encapsulados: TO-92S
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VN10KLS datasheet
vn0610l vn10kls vn2222l.pdf
VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Rel
vn0610l vn10kls vn2222l.pdf
VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Rel
vn10kc.pdf
VN10KC New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low On-Resistance 3 W D Low Offset Voltage D Batt
vn10k.pdf
Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes a Free from secondary breakdown vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power
Otros transistores... NDP08N60ZG , PTF10149 , RJK0234DNS , SPP100N06S2-05 , SPB100N06S2-05 , SSM5N03FE , STK0260D , SWD5N65K , 20N60 , BFW10 , BFW11 , CS3N20ATH , FHP3205 , FS10KM-12 , FS10KM-2 , FTP50N20R , JCS12N65T .
History: 2SJ451 | WMK120N04TS | VN0335ND | 18N20
History: 2SJ451 | WMK120N04TS | VN0335ND | 18N20
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