ME4410A Todos los transistores

 

ME4410A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ME4410A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: SOP-8

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ME4410A datasheet

 ..1. Size:667K  1
me4410a.pdf pdf_icon

ME4410A

ME4410A N-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The ME4410A is the N-Channel logic enhancement mode power RDS(ON) 20m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored

 0.1. Size:2143K  1
me4410ad.pdf pdf_icon

ME4410A

ME4410AD www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 0.2. Size:2143K  cn vbsemi
me4410ad.pdf pdf_icon

ME4410A

ME4410AD www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 8.1. Size:2143K  cn vbsemi
me4410.pdf pdf_icon

ME4410A

ME4410 www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO-8

Otros transistores... CS3N20ATH , FHP3205 , FS10KM-12 , FS10KM-2 , FTP50N20R , JCS12N65T , JCS12N65CT , JCS12N65FT , IRFP260N , MMD65R600QRH , MT3245 , NCE0117K , NTMFS4C55N , SI9953DY , STP110N7F6 , SUP85N03-07P , SUB85N03-07P .

History: ISCNH342W | TX40N06B | AOD2922

 

 

 

 

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