HY4306W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HY4306W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 326 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 25 V
   Corriente continua de drenaje |Id|: 230 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 171 nC
   Tiempo de subida (tr): 18 nS
   Conductancia de drenaje-sustrato (Cd): 1093 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0028 Ohm
   Paquete / Cubierta: TO-247

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HY4306W Datasheet (PDF)

..1. Size:3121K 1
hy4306w hy4306a.pdf

HY4306W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.2 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching applicationG N-Channel MOSFET Power Management for Inverter Systems.SOrdering and Marking Infor

..2. Size:694K hymexa
hy4306w hy4306a.pdf

HY4306W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.2 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and Mar

8.1. Size:629K hymexa
hy4306b6.pdf

HY4306B6N-Channel Enhancement Mode MOSFET Feature Description Pin Description 60V/290ARDS(ON)= 1.8m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available Pin 7(RoHS Compliant) Pin1 TO-263-6L Pin4 Pin1 Applications Switch application Brushless Motor Drive Pin2,3,5,6,7 N-Channel MOSFETOrdering and Marking Info

8.2. Size:512K hymexa
hy4306p hy4306b.pdf

HY4306P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.6 m(typ.) @ VGS=10V 100% avalanche testedSD Reliable and Rugged GSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and M

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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