HY4306A Todos los transistores

 

HY4306A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY4306A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 326 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 230 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1093 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO-3P
 

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HY4306A Datasheet (PDF)

 ..1. Size:3121K  1
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HY4306A

HY4306W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.2 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching applicationG N-Channel MOSFET Power Management for Inverter Systems.SOrdering and Marking Infor

 ..2. Size:694K  hymexa
 hy4306w hy4306a.pdf pdf_icon

HY4306A

HY4306W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.2 m(typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-247A-3LTO-3P-3LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and Mar

 8.1. Size:629K  hymexa
 hy4306b6.pdf pdf_icon

HY4306A

HY4306B6N-Channel Enhancement Mode MOSFET Feature Description Pin Description 60V/290ARDS(ON)= 1.8m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available Pin 7(RoHS Compliant) Pin1 TO-263-6L Pin4 Pin1 Applications Switch application Brushless Motor Drive Pin2,3,5,6,7 N-Channel MOSFETOrdering and Marking Info

 8.2. Size:512K  hymexa
 hy4306p hy4306b.pdf pdf_icon

HY4306A

HY4306P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/230ARDS(ON)= 2.6 m(typ.) @ VGS=10V 100% avalanche testedSD Reliable and Rugged GSD Lead Free and Green Devices AvailableG(RoHS Compliant)TO-220FB-3L TO-263-2LApplicationsSwitching application Power Management for Inverter Systems.N-Channel MOSFETOrdering and M

MOSTRAR MÁS

Otros transistores... 7N80G-TF1-T , 7N80G-TQ2-R , 7N80G-TQ2-T , AO3419L , CMP100N04 , CMB100N04 , CMI100N04 , HY4306W , IRLB4132 , MDF1723 , ME4410AD , ME4970 , ME4970G , NDP04N60Z , PDEC3907Z , PFB2N60 , PFF2N60 .

 

 
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