STD180N4F6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD180N4F6
Código: 180N4F6
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 130 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 130 nC
Tiempo de subida (tr): 150 nS
Conductancia de drenaje-sustrato (Cd): 745 pF
Resistencia entre drenaje y fuente RDS(on): 0.0028 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET STD180N4F6
STD180N4F6 Datasheet (PDF)
std180n4f6.pdf
STD180N4F6 N-channel 40 V, 2.5 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOTSTD180N4F6 40 V 2.8 m 80 A 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications
std1802.pdf
STD1802Low voltage fast-switching NPN power transistorFeatures Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3package in tape & reel (suffix T4)1 TO-252Description DPAKThe device is manufactured in Planar technology (suffix T4)with Base Island l
std1805.pdf
STD1805LOW VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATAOrdering Code Marking ShipmentSTD1805T4 D1805 Tape & ReelSTD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE3 HIGH CURRENT GAIN CHARACTERISTIC 321 FAST-SWITCHING SPEED1 THROUGH-HOLE IPAK (TO-251) POWERPACKAGE IN TUBE (Suffix "-1")IPAK DPAK SURFACE-MOUNTING DPAK (TO-252)
std1802t4-a.pdf
STD1802T4-ALow voltage fast-switching NPN power transistorFeatures This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic3 Fast-switching speed1 Surface-mounting DPAK (TO-252) power TO-252package in tape & reel (suffix T4) DPAK (suffix T4)DescriptionThe device
std1802.pdf
isc Silicon NPN Power Transistor STD1802DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.4V(Max)( I = 3A; I = 0.15A)CE(sat C BDC Current Gain -h = 100(Min)@ I = 3AFE CFast -Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCCFL dirversVoltage regulatorsRelay dirversHigh efficiency l
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