STD180N4F6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STD180N4F6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 150 nS
   Cossⓘ - Capacitancia de salida: 745 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: DPAK

Búsqueda de reemplazo de MOSFET STD180N4F6

STD180N4F6 Datasheet (PDF)

..1. Size:630K 1
std180n4f6.pdf

STD180N4F6 N-channel 40 V, 2.5 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOTSTD180N4F6 40 V 2.8 m 80 A 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1: Internal schematic diagram Applications

8.1. Size:242K st
std1802.pdf

STD1802Low voltage fast-switching NPN power transistorFeatures Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3package in tape & reel (suffix T4)1 TO-252Description DPAKThe device is manufactured in Planar technology (suffix T4)with Base Island l

8.2. Size:237K st
std1805.pdf

STD1805LOW VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORPRELIMINARY DATAOrdering Code Marking ShipmentSTD1805T4 D1805 Tape & ReelSTD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTERSATURATION VOLTAGE3 HIGH CURRENT GAIN CHARACTERISTIC 321 FAST-SWITCHING SPEED1 THROUGH-HOLE IPAK (TO-251) POWERPACKAGE IN TUBE (Suffix "-1")IPAK DPAK SURFACE-MOUNTING DPAK (TO-252)

8.3. Size:247K st
std1802t4-a.pdf

STD1802T4-ALow voltage fast-switching NPN power transistorFeatures This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic3 Fast-switching speed1 Surface-mounting DPAK (TO-252) power TO-252package in tape & reel (suffix T4) DPAK (suffix T4)DescriptionThe device

8.4. Size:222K inchange semiconductor
std1802.pdf

isc Silicon NPN Power Transistor STD1802DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.4V(Max)( I = 3A; I = 0.15A)CE(sat C BDC Current Gain -h = 100(Min)@ I = 3AFE CFast -Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCCFL dirversVoltage regulatorsRelay dirversHigh efficiency l

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP9985GM-HF

Liste

Recientemente añadidas las descripciónes de los transistores: