STD180N4F6 Todos los transistores

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 std180n4f6.pdf

STD180N4F6 N-channel 40 V, 2.5 m typ., 80 A STripFET F6 Power MOSFET in a DPAK package Datasheet - preliminary data Features Order code V R max. I P DS DS(on) D TOT STD180N4F6 40 V 2.8 m 80 A 130 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Figure 1 Internal schematic diagram Applications

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 std1802.pdf

STD1802 Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252) power 3 package in tape & reel (suffix T4) 1 TO-252 Description DPAK The device is manufactured in Planar technology (suffix T4 ) with Base Island l

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 std1805.pdf

STD1805 LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA Ordering Code Marking Shipment STD1805T4 D1805 Tape & Reel STD1805-1 D1805 Tube VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE 3 HIGH CURRENT GAIN CHARACTERISTIC 3 2 1 FAST-SWITCHING SPEED 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (Suffix "-1") IPAK DPAK SURFACE-MOUNTING DPAK (TO-252)

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 std1802t4-a.pdf

STD1802T4-A Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic 3 Fast-switching speed 1 Surface-mounting DPAK (TO-252) power TO-252 package in tape & reel (suffix T4) DPAK (suffix T4 ) Description The device

 8.4. Size:222K  inchange semiconductor
 std1802.pdf

isc Silicon NPN Power Transistor STD1802 DESCRIPTION Low Collector-Emitter Saturation Voltage- V )= 0.4V(Max)( I = 3A; I = 0.15A) CE(sat C B DC Current Gain -h = 100(Min)@ I = 3A FE C Fast -Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS CCFL dirvers Voltage regulators Relay dirvers High efficiency l