SUP65P06-20 Todos los transistores

SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.020 65a S TO 220AB TO 263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06 20 Top View P Channel MOSFET SUP65P06 20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 65a Con

SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.020 65a TO-220AB S TO-263 G DRAIN connected to TAB G D S G D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_

SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = 10 V 65 40 40 0.023 @ VGS = 4.5 V 50 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15 Top View P-Channel MOSFET SUP65P04-15 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Param

SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Compliant to RoHS Directive 2002/95/EC 0.015 at VGS = - 10 V - 65 - 40 0.023 at VGS = - 4.5 V - 50 S TO-263 G DRAIN connected to TAB G D S Top View G D S SUB65P04-15 Top View D SUP65P04-15 P-Channel MOSFET Orderin