DMN95H8D5HCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMN95H8D5HCT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 950 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 7 Ohm
   Paquete / Cubierta: TO-220AB

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DMN95H8D5HCT Datasheet (PDF)

..1. Size:347K 1
dmn95h8d5hct.pdf

DMN95H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS (@ TJ Max) RDS(ON) TC = +25C High BVDSS Rating for Power Application 1000V 7@VGS = 10V 2.5A Low Input/Output Leakage Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new genera

..2. Size:258K inchange semiconductor
dmn95h8d5hct.pdf

isc N-Channel Mosfet Transistor DMN95H8D5HCTFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 950V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV D

0.1. Size:358K diodes
dmn95h8d5hcti.pdf

DMN95H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID MAX BVDSS RDS(ON) Package High BVDSS Rating for Power Application TC = +25C ITO220AB Low Input/Output Leakage 950V 7@VGS = 10V 2.5A (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Des

0.2. Size:251K inchange semiconductor
dmn95h8d5hcti.pdf

isc N-Channel MOSFET Transistor DMN95H8D5HCTIFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

8.1. Size:536K diodes
dmn95h2d2hcti.pdf

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN95H2D2HCTI GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BV R DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 950V 2.2@V = 10V 6A GS Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

8.2. Size:251K inchange semiconductor
dmn95h2d2hcti.pdf

isc N-Channel MOSFET Transistor DMN95H2D2HCTIFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 950V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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