FCH040N65S3 Todos los transistores

 ..1. Size:347K  1
 fch040n65s3.pdf

FCH040N65S3 Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 65 A, 40 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to

 ..2. Size:507K  onsemi
 fch040n65s3.pdf

FCH040N65S3 MOSFET Power, N-Channel, SUPERFET) III, Easy Drive 650 V, 65 A, 40 mW www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor s brand-new high VDSS RDS(ON) MAX ID MAX voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate 650 V 40 mW @ 10 V 65 A charge performance. This advan

 ..3. Size:361K  inchange semiconductor
 fch040n65s3.pdf

isc N-Channel MOSFET Transistor FCH040N65S3 FEATURES With TO-247 packaging Drain Source Voltage- V 650V DSS Static drain-source on-resistance RDS(on) 99m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:617K  fairchild semi
 fch041n60f f085.pdf

April 2015 FCH041N60F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m D Features Typical RDS(on) = 36 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A G Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF) 100% Avalanche Tested G Qualified to AEC Q101 D TO-247 S S RoHS Compliant Description For current package dra

 9.2. Size:635K  fairchild semi
 fch041n65f f085.pdf

November 2014 FCH041N65F_F085 N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m D Features Typical RDS(on) = 34 m at VGS = 10 V, ID = 38 A Typical Qg(tot) = 234 nC at VGS = 10V, ID = 38 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new For current package drawing,

 9.3. Size:559K  fairchild semi
 fch041n60e.pdf

December 2013 FCH041N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 77 A, 41 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 285 nC

 9.4. Size:594K  fairchild semi
 fch041n60f.pdf

December 2013 FCH041N60F N-Channel SuperFET II FRFET MOSFET 600 V, 76 A, 41 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 m charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn

 9.5. Size:1373K  fairchild semi
 fch041n65f.pdf

December 2014 FCH041N65F N-Channel SuperFET II FRFET MOSFET 650 V, 76 A, 41 m Features Description 700 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 36 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 226 nC

 9.6. Size:437K  fairchild semi
 fch043n60.pdf

April 2014 FCH043N60 N-Channel SuperFET II MOSFET 600 V, 75 A, 43 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 37 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 163 nC) and lowe

 9.7. Size:416K  onsemi
 fch041n65f-f085.pdf

MOSFET N-Channel, SUPERFET) II, FRFET) 650 V, 76 A, 41 mW FCH041N65F-F085 Description SuperFET II Mosfet is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize VDS RDS(ON) MAX ID MAX condu

 9.8. Size:906K  onsemi
 fch041n60f.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:540K  onsemi
 fch043n60.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:261K  inchange semiconductor
 fch041n60f.pdf

isc N-Channel MOSFET Transistor FCH041N60F FEATURES With TO-247 packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V Ga

 9.11. Size:362K  inchange semiconductor
 fch043n60.pdf