FCPF067N65S3 Todos los transistores

 

FCPF067N65S3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCPF067N65S3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 52 nS

Cossⓘ - Capacitancia de salida: 68 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.067 Ohm

Encapsulados: TO-220F

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FCPF067N65S3 datasheet

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FCPF067N65S3

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and oth

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fcpf067n65s3.pdf pdf_icon

FCPF067N65S3

isc N-Channel MOSFET Transistor FCPF067N65S3 FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 9.1. Size:308K  onsemi
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FCPF067N65S3

FCPF099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advance

 9.2. Size:256K  inchange semiconductor
fcpf099n65s3.pdf pdf_icon

FCPF067N65S3

isc N-Channel MOSFET Transistor FCPF099N65S3 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

Otros transistores... FCH040N65S3 , FCH099N60E , FCH099N65S3 , FCP099N60E , FCP125N60E , FCP165N60E , FCP260N65S3 , FCP850N80Z , IRF830 , FCPF150N65F , FCPF165N65S3L1 , FCPF250N65S3L1 , FDA44N50 , FDI036N10A , FDP8D5N10C , FDPF8D5N10C , FMW60N190S2HF .

History: 2SK1166 | NTD4906N | TK6A65W | FCPF250N65S3L1

 

 

 


History: 2SK1166 | NTD4906N | TK6A65W | FCPF250N65S3L1

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