FDI036N10A Todos los transistores

 ..1. Size:322K  inchange semiconductor
 fdi036n10a.pdf

isc N-Channel MOSFET Transistor FDI036N10A FEATURES With TO-262 packaging Drain Source Voltage- V 100V DSS Static drain-source on-resistance RDS(on) 4.5m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:495K  fairchild semi
 fdi030n06.pdf

June 2009 FDI030N06 tm N-Channel PowerTrench MOSFET 60V, 193A, 3.2m Features Description RDS(on) = 2.6m ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been espe- Fast Switching Speed cially tailored to minimize the on-state resistance and yet maintain superior switching performan

 9.2. Size:332K  fairchild semi
 fdp038an06a0 fdi038an06a0.pdf

December 2010 FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8m Features Applications rDS(ON) = 3.5m (Typ.), VGS = 10V, ID = 80A Motor / Body Load Control Qg(tot) = 95nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive P

 9.3. Size:673K  onsemi
 fdi030n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.4. Size:586K  onsemi
 fdp038an06a0 fdi038an06a0.pdf

 9.5. Size:255K  inchange semiconductor
 fdi030n06.pdf

isc N-Channel MOSFET Transistor FDI030N06 FEATURES Drain Current I = 136A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 3.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 9.6. Size:255K  inchange semiconductor
 fdi038an06a0.pdf

isc N-Channel MOSFET Transistor FDI038AN06A0 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 3.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu