SML60B18 Todos los transistores

 

SML60B18 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SML60B18

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 3450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de SML60B18 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SML60B18 datasheet

 ..1. Size:21K  semelab
 sml60b18.pdf pdf_icon

SML60B18

SML60B18 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 600V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 18A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.350 2.21

 7.1. Size:21K  semelab
 sml60b16.pdf pdf_icon

SML60B18

SML60B16 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 600V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 16A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.400 2.21

 8.1. Size:21K  semelab
 sml60b25.pdf pdf_icon

SML60B18

SML60B25 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 600V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 25A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.250 2.21

 8.2. Size:21K  semelab
 sml60b21.pdf pdf_icon

SML60B18

SML60B21 TO 247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 600V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 21A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.300 2.21

MOSTRAR MÁS

Otros transistores... SML6060BN , SML6060CN , SML6070AN , SML6070BN , SML6070CN , SML60A16 , SML60A18 , SML60B16 , 2SK3878 , SML60B21 , SML60B25 , SML60C12 , SML60H16 , SML60H20 , SML60J35 , SML60J62 , SML60L38 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG

 

 

 

Popular searches

irfz24n | bd135 | d880 | 2n5457 equivalent | 2sc945 replacement | 9014 transistor | irfp260n datasheet | irfp250m

 

 

↑ Back to Top
.