IPI086N10N3 Todos los transistores

 

IPI086N10N3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI086N10N3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 523 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0086 Ohm
   Paquete / Cubierta: TO-262
 

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IPI086N10N3 Datasheet (PDF)

 ..1. Size:261K  inchange semiconductor
 ipi086n10n3.pdf pdf_icon

IPI086N10N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPI086N10N3FEATURESStatic drain-source on-resistance:RDS(on) 8.2mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(

 0.1. Size:778K  infineon
 ipp086n10n3g ipi086n10n3g ipb083n10n3g ipd082n10n3g.pdf pdf_icon

IPI086N10N3

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 0.2. Size:757K  infineon
 ipp086n10n3-g ipi086n10n3-g ipb083n10n3-g ipd082n10n3-g.pdf pdf_icon

IPI086N10N3

IPP086N10N3 G IPI086N10N3 GIPB083N10N3 G IPD082N10N3 GOptiMOS3 Power-TransistorProduct Summary FeaturesVDS 100 V N-channel, normal levelRDS(on),max (TO 252) 8.2 mW Excellent gate charge x R product (FOM)DS(on)ID 80 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JED

 9.1. Size:527K  infineon
 ipb08cn10ng ipi08cn10ng ipp08cn10ng.pdf pdf_icon

IPI086N10N3

IPB08CN10N GIPI08CN10N G IPP08CN10N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 100 VDS N-channel, normal levelR 8.2mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 95 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

MOSTRAR MÁS

Otros transistores... IPI030N10N3 , IPI037N08N3 , IPI041N12N3 , IPI051N15N5 , IPI072N10N3 , IPI075N15N3 , IPI076N12N3 , IPI076N15N5 , IRFB4110 , IPI100N08N3 , IPI110N20N3 , IPI111N15N3 , IPI147N12N3 , IPI180N10N3 , IPI200N15N3 , IPI200N25N3 , IPI26CN10N .

History: SK860315 | SVF10N60F

 

 
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