IRFSL7762 Todos los transistores

 

IRFSL7762 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFSL7762

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 140 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 85 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.7 V

Carga de compuerta (Qg): 85 nC

Tiempo de elevación (tr): 49 nS

Conductancia de drenaje-sustrato (Cd): 370 pF

Resistencia drenaje-fuente RDS(on): 0.0067 Ohm

Empaquetado / Estuche: TO-262

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IRFSL7762 Datasheet (PDF)

1.1. irfs7762 irfsl7762pbf.pdf Size:610K _international_rectifier

IRFSL7762
IRFSL7762

 StrongIRFET™ IRFS7762PbF IRFSL7762PbF HEXFET® Power MOSFET Application  Brushed motor drive applications D VDSS 75V  BLDC motor drive applications  Battery powered circuits RDS(on) typ. 5.6m  Half-bridge and full-bridge topologies G  Synchronous rectifier applications max 6.7m  Resonant mode power supplies S ID 8

1.2. irfsl7762.pdf Size:271K _inchange_semiconductor

IRFSL7762
IRFSL7762

Isc N-Channel MOSFET Transistor IRFSL7762 ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75

 3.1. irfb7730 irfs7730pbf irfsl7730pbf.pdf Size:657K _international_rectifier

IRFSL7762
IRFSL7762

 StrongIRFET™ IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET® Power MOSFET Application  Brushed motor drive applications VDSS 75V D  BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m  Half-bridge and full-bridge topologies max 2.6m G  Synchronous rectifier applications ID (Silicon Limited) 246A

3.2. irfb7734 irfs7734pbf irfsl7734pbf.pdf Size:650K _international_rectifier

IRFSL7762
IRFSL7762

 StrongIRFET™ IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET® Power MOSFET Application  Brushed motor drive applications VDSS 75V D  BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m  Half-bridge and full-bridge topologies G  Synchronous rectifier applications max 3.5m  Resonant mode power supp

 3.3. irfb7787 irfs7787pbf irfsl7787pbf.pdf Size:667K _international_rectifier

IRFSL7762
IRFSL7762

 StrongIRFET™ IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET® Power MOSFET Application  Brushed Motor drive applications D VDSS 75V  BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m  Half-bridge and full-bridge topologies G  Synchronous rectifier applications max 8.4m  Resonant mode power suppl

3.4. irfsl7787.pdf Size:287K _inchange_semiconductor

IRFSL7762
IRFSL7762

isc N-Channel MOSFET Transistor IRFSL7787 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectifier applications ·Resonant mode power supplies ·Battery powered circuits ·ABSOLUTE MAXIM

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