IRFSL7762 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFSL7762
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 140 W
Tensión drenaje-fuente (Vds): 75 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 85 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 3.7 V
Carga de compuerta (Qg): 85 nC
Tiempo de elevación (tr): 49 nS
Conductancia de drenaje-sustrato (Cd): 370 pF
Resistencia drenaje-fuente RDS(on): 0.0067 Ohm
Empaquetado / Estuche: TO-262
Búsqueda de reemplazo de MOSFET IRFSL7762
IRFSL7762 Datasheet (PDF)
1.1. irfs7762 irfsl7762pbf.pdf 
Size:610K _international_rectifier
StrongIRFET™ IRFS7762PbF IRFSL7762PbF HEXFET® Power MOSFET Application Brushed motor drive applications D VDSS 75V BLDC motor drive applications Battery powered circuits RDS(on) typ. 5.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 6.7m Resonant mode power supplies S ID 8
1.2. irfsl7762.pdf Size:271K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRFSL7762 ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75
3.1. irfb7730 irfs7730pbf irfsl7730pbf.pdf Size:657K _international_rectifier
StrongIRFET™ IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET® Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6m G Synchronous rectifier applications ID (Silicon Limited) 246A
3.2. irfb7734 irfs7734pbf irfsl7734pbf.pdf Size:650K _international_rectifier
StrongIRFET™ IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET® Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
3.3. irfb7787 irfs7787pbf irfsl7787pbf.pdf Size:667K _international_rectifier
StrongIRFET™ IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET® Power MOSFET Application Brushed Motor drive applications D VDSS 75V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 6.9m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power suppl
3.4. irfsl7787.pdf Size:287K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFSL7787 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectifier applications ·Resonant mode power supplies ·Battery powered circuits ·ABSOLUTE MAXIM
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