12N65KL-TQ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 12N65KL-TQ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 225 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 125 nS
Cossⓘ - Capacitancia de salida: 175 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de 12N65KL-TQ MOSFET
12N65KL-TQ datasheet
12n65kl-ta3-t 12n65kg-ta3-t 12n65kl-tf1-t 12n65kg-tf1-t 12n65kl-tf2-t 12n65kg-tf2-t 12n65kl-tf3-t 12n65kg-tf3-t 12n65kl-tq2-t 12n65kg-tq2-t 12n65kl-tq2-r 12n65kg-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,
12n65kl-t 12n65kg-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 12N65K-MT Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65K-MT are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance,
12n65kl-tf1-t.pdf
isc N-Channel MOSFET Transistor 12N65KL-TF1-T FEATURES Static Drain-Source On-Resistance R
Otros transistores... IRFL3713S , IRFP3207Z , IRFP4905 , IRFSL4510 , IRFSL7762 , IRFSL7787 , IRFU430A , 12N65KL-TA , IRLB4132 , 12N65KG-TA , 12N65KG-TF , 12N65KG-TQ , HY3306P , HY3306B , IRFS630B , MT3203 , SVF5N60T .
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