TSF5N60M MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TSF5N60M
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Encapsulados: TO220F
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TSF5N60M datasheet
tsp5n60m tsf5n60m.pdf
TSP5N60M/TSF5N60M 600V N-Channel MOSFET Features 4.5A,600v,RDS(on)=2.2 @VGS=10V Gate charge (Typical 17nC) High ruggedness Fast switching 100% AvalancheTested Improved dv/dt capability General Description This Power MOSFET is produced using Truesemi s advanced planar stripe, DMOS technology.This latest technology has been especially designed t
tsp5n60m tsf5n60m.pdf
TSP5N60M/TSF5N60M 600V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,600V,Max.RDS(on)=2.50 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness performance, an
tsp5n65m tsf5n65m.pdf
TSP5N65M/TSF5N65M 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Truesemi s 4.5A,650V,Max.RDS(on)=3.0 @ VGS =10V advanced planar stripe DMOS technology. This advanced technology has been especially tailored to Low gate charge(typical 16nC) minimize on-state resistance, provide superior switching High ruggedness perform
Otros transistores... HY3306B , IRFS630B , MT3203 , SVF5N60T , SVF5N60F , SVF5N60D , SVF5N60MJ , TSP5N60M , IRFB3607 , AO6414 , MC6414 , CMP40P03 , CSD40N70 , FQPF20N60 , FQP20N60 , FTD06N03NA , GPT18N50GN3P .
History: SGM2305A | HM1404D | 2SK3109-ZJ
History: SGM2305A | HM1404D | 2SK3109-ZJ
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