HY3403D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY3403D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 469 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de HY3403D MOSFET
- Selecciónⓘ de transistores por parámetros
HY3403D datasheet
hy3403d hy3403u hy3403v.pdf
HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m (typ.)@VGS = 10V RDS(ON)= 2.9m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P
hy3403.pdf
HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m (typ.)@VGS = 10V RDS(ON)= 2.9m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P
hy3403p hy3403b.pdf
HY3403P/B N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/140A RDS(ON)=2.2m (typ.)@VGS = 10V RDS(ON)=2.7m (typ.) @VGS =4.5V 100% avalanche tested S GD Excellent CdV/dt effect decline Lead- Free Device Available GDS TO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Infor
hy3408.pdf
HY3408P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25 C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current * TC
Otros transistores... TP0610K , TTK2837 , UT70N03G , DG4N65-TO251 , DG4N65-TO252 , DG4N65-TO220 , DG4N65-TO220F , DG4N65-TO262 , IRFZ46N , HY3403U , HY3403V , HY3410P , HY3410M , HY3410B , HY3410PS , HY3410PM , HY3410MF .
History: AP3P010H | SSI65R360S2 | DMP2004VK
History: AP3P010H | SSI65R360S2 | DMP2004VK
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
c536 transistor | 2n706 | 2n388 | 2n3645 | 2n1307 | 2sa747 | a1941 | 2sd424 datasheet