HY3403D Todos los transistores

 

HY3403D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY3403D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 60 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 100 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 120 nC
   Tiempo de subida (tr): 11 nS
   Conductancia de drenaje-sustrato (Cd): 469 pF
   Resistencia entre drenaje y fuente RDS(on): 0.003 Ohm
   Paquete / Cubierta: TO252

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HY3403D Datasheet (PDF)

 ..1. Size:784K  hymexa
hy3403d hy3403u hy3403v.pdf

HY3403D
HY3403D

HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m(typ.)@VGS = 10V RDS(ON)= 2.9m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P

 8.1. Size:784K  1
hy3403.pdf

HY3403D
HY3403D

HY3403D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/100A RDS(ON)= 2.4m(typ.)@VGS = 10V RDS(ON)= 2.9m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Systems High Frequency Synchronous Buck Converters for Computer P

 8.2. Size:1093K  hymexa
hy3403p hy3403b.pdf

HY3403D
HY3403D

HY3403P/B N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/140ARDS(ON)=2.2m(typ.)@VGS = 10VRDS(ON)=2.7m(typ.) @VGS =4.5V 100% avalanche tested SGD Excellent CdV/dt effect decline Lead- Free Device AvailableGDSTO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DCN-Channel MOSFETOrdering and Marking Infor

 9.1. Size:820K  1
hy3408.pdf

HY3403D
HY3403D

HY3408P/M/B/PS/PMAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range -55 to 175 C IS Diode Continuous Forward Current TC=25C 140 A Mounted on Large Heat Sink IDM Pulsed Drain Current * TC

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