STD448S Todos los transistores

 

STD448S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD448S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 42 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 79 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm

Encapsulados: TO251 IPAK

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STD448S datasheet

 ..1. Size:134K  1
stu448s std448s.pdf pdf_icon

STD448S

Green Product STU/D448S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 26 @ VGS=10V TO-252 and TO-251 Package. 40V 30A 66 @ VGS=4.5V G S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I -

 9.1. Size:908K  st
std44n4lf6.pdf pdf_icon

STD448S

STD44N4LF6 N-channel 40 V, 8.9 m , 44 A DPAK STripFET VI DeepGATE Power MOSFET Features Order code VDSS RDS(on) max ID STD44N4LF6 40 V 12.5 m 44 A 100% avalanche tested 3 Logic level drive 1 Application DPAK Switching applications Automotive Description Figure 1. Internal schematic diagram This product utilizes the 6th generation of design rules of ST

 9.2. Size:123K  samhop
stu449s std449s.pdf pdf_icon

STD448S

Green Product STU/D449S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 41 @ VGS=-10V TO-252 and TO-251 Package. -40V -24A 74 @ VGS=-4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO -

 9.3. Size:122K  samhop
stu441s std441s.pdf pdf_icon

STD448S

Green Product STU/D441S a S mHop Microelectronics C orp. Ver 1.0 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 35 @ VGS=10V Suface Mount Package. -40V -27A 61 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 251 I -

Otros transistores... HY3410MF , JCS3910V , JCS3910R , MMD65R900QRH , S68N08R , S68N08S , SVF10N65F , SVF10N65T , IRFZ44N , CRTS084NE6N , HY3210P , HY3210M , HY3210B , HY3210PS , HY3210PM , JCS8N60S , JCS8N60B .

History: HY3410MF | SWD6N65K | S2N7002K | STW43NM60N

 

 

 


History: HY3410MF | SWD6N65K | S2N7002K | STW43NM60N

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