AOW66412 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOW66412
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 260 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 1438 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0019 Ohm
Paquete / Cubierta: TO262
Búsqueda de reemplazo de AOW66412 MOSFET
AOW66412 Datasheet (PDF)
aow66412.pdf
AOW66412TM 40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aow66412.pdf
AOW66412TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
aow66412.pdf
isc N-Channel MOSFET Transistor AOW66412FEATURESDrain Current I =120A@ T =25D CDrain Source Voltage-: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aow66613.pdf
AOW66613TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
Otros transistores... SSP60N05 , SSP60N06 , SUV90N06-05 , SVF740T , SVF740F , AOB9N70 , AOTF29S50L , AOTF9N70L , IRFB4115 , FMV60N190S2HF , JCS650C , JCS650F , JCS650S , R6002END3 , R6003KND3 , R6004JND3 , R6004JNJ .
History: FMV60N190S2HF
History: FMV60N190S2HF
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