R6004JNX Todos los transistores

 

R6004JNX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: R6004JNX

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 35 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 7 V

Carga de compuerta (Qg): 10.5 nC

Tiempo de elevación (tr): 11 nS

Conductancia de drenaje-sustrato (Cd): 18 pF

Resistencia drenaje-fuente RDS(on): 1.43 Ohm

Empaquetado / Estuche: TO220FM

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R6004JNX Datasheet (PDF)

0.1. r6004jnx.pdf Size:2220K _1

R6004JNX
R6004JNX

R6004JNXDatasheetNch 600V 4A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)1.43ID4APD35W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac

0.2. r6004jnx.pdf Size:252K _inchange_semiconductor

R6004JNX
R6004JNX

isc N-Channel MOSFET Transistor R6004JNXFEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 7.1. r6004jnd3.pdf Size:1485K _1

R6004JNX
R6004JNX

R6004JND3DatasheetNch 600V 4A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)1.43ID4APD60W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack

7.2. r6004jnj.pdf Size:2263K _1

R6004JNX
R6004JNX

R6004JNJDatasheetNch 600V 4A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)1.43ID4APD60W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPacka

 7.3. r6004jnd3.pdf Size:265K _inchange_semiconductor

R6004JNX
R6004JNX

isc N-Channel MOSFET Transistor R6004JND3FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

7.4. r6004jnj.pdf Size:254K _inchange_semiconductor

R6004JNX
R6004JNX

isc N-Channel MOSFET Transistor R6004JNJFEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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