R6004JNX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6004JNX
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 35 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 7 V
Carga de compuerta (Qg): 10.5 nC
Tiempo de elevación (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 18 pF
Resistencia drenaje-fuente RDS(on): 1.43 Ohm
Empaquetado / Estuche: TO220FM
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R6004JNX Datasheet (PDF)
0.1. r6004jnx.pdf 
Size:2220K _1
R6004JNXDatasheetNch 600V 4A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)1.43ID4APD35W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac
0.2. r6004jnx.pdf Size:252K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6004JNXFEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
7.1. r6004jnd3.pdf Size:1485K _1
R6004JND3DatasheetNch 600V 4A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)1.43ID4APD60W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack
7.2. r6004jnj.pdf Size:2263K _1
R6004JNJDatasheetNch 600V 4A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)1.43ID4APD60W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPacka
7.3. r6004jnd3.pdf Size:265K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6004JND3FEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
7.4. r6004jnj.pdf Size:254K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6004JNJFEATURESDrain Current I =4A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.43(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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