R6007JNX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: R6007JNX
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 46 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 7 V
Carga de compuerta (Qg): 17.5 nC
Tiempo de elevación (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 30 pF
Resistencia drenaje-fuente RDS(on): 0.78 Ohm
Empaquetado / Estuche: TO220FM
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R6007JNX Datasheet (PDF)
0.1. r6007jnx.pdf 
Size:2206K _1
R6007JNXDatasheetNch 600V 7A Power MOSFETlOutlinel TO-220FMVDSS600VRDS(on)(Max.)0.780ID7APD46W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPa
0.2. r6007jnx.pdf Size:252K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6007JNXFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
7.1. r6007jnd3.pdf Size:1482K _1
R6007JND3DatasheetNch 600V 7A Power MOSFETlOutlinel TO-252VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPac
7.2. r6007jnj.pdf Size:2252K _1
R6007JNJDatasheetNch 600V 7A Power MOSFETlOutlinel LPT(S)VDSS600VRDS(on)(Max.)0.780ID7APD96W lFeaturesllInner circuitl1) Fast reverse recovery time (trr)2) Low on-resistance3) Fast switching speed4) Drive circuits can be simple5) Pb-free plating ; RoHS compliantlApplicationllPack
7.3. r6007jnd3.pdf Size:266K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6007JND3FEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
7.4. r6007jnj.pdf Size:255K _inchange_semiconductor
isc N-Channel MOSFET Transistor R6007JNJFEATURESDrain Current I =7A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 780m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
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