HY3003P Todos los transistores

HY3003P/B N-Channel Enhancement Mode MOSFET Features Pin Description 30V/100A RDS(ON)= 3.5m (typ.) @ VGS=10V 100% EAS Guaranteed Super Low Gate Charge Excellent CdV/dt effect decline S D Advanced high cell density Trench technology G Halogen - Free Device Available S D G TO-263-2L TO-263-2L TO-220FB-3L TO-220FB-3L Applications D High Frequency Synchronous

01233245657 !"#$ %&'()*& ,-.4&/0*-1(-2. 3 4 5 6 78"9! ;9? @ A"; 78"9! ;4B>9? @ A";CD S 3 E6F $G D S S G D D G G 3 7 HI 7JKK S D G 3 L K #M AM 8FHG6FHI 97L" ?H TO-252-2L TO-251-3L TO-251-3S N11O-0'(-2./ 3 P9M K QMRFMM"G G !"#$ S*T&*-.U'.TV'*W-.UX.Y2*Z'(-2. P ^K 8 [ 8_$!

HY3007P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features / 68V 120 A 5.0 (typ.) @ VGS=10V RDS(ON)= m S D G S D Avalanche Rated G S D Reliable and Rugged G TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G Applications TO-3PS-3L TO-3PM-3S Power Management for Inverter Sy

HY3008P/M/B/ MF /PL/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/100A RDS(ON)= 6.6m (typ.)@VGS = 10V S D G 100% Avalanche Tested S D G Reliable and Rugged S D G Lead- Free Devices Available TO-220FB-3L TO-220FB-3M TO-263-2L (RoHS Compliant) Applications S D Switching application G S S D D Power management for inverter systems