NCEP1520K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP1520K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 68 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.5 nS
Cossⓘ - Capacitancia de salida: 74.7 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de NCEP1520K MOSFET
- Selecciónⓘ de transistores por parámetros
NCEP1520K datasheet
ncep1520k.pdf
Pb Free Product http //www.ncepower.com NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep1520k.pdf
Pb Free Product http //www.ncepower.com NCEP1520K NCE N-Channel Super Trench Power MOSFET Description The NCEP1520K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep1520g.pdf
http //www.ncepower.com NCEP1520G NCE N-Channel Super Trench Power MOSFET Description The NCEP1520G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =150V,ID =20A frequency switching performance. Both conduction and RDS(ON)=59m (typical) @ VGS=10V switching power losses are minimized due to an extremely low com
ncep1520bk.pdf
http //www.ncepower.com NCEP1520BK NCE N-Channel Super Trench Power MOSFET Description The NCEP1520BK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
Otros transistores... STE24NA100 , STE15NA100 , AO3409L , FTP23N10A , HY3003P , HY3003B , IPD70R900P7S , MDE1991RH , IRFP450 , RJK6035DPP-E0 , STK0160 , 23N50 , APT10M09LVFR , APT20M16LFLL , APT20M18LVFR , APT20M18LVR , APT20M20LFLL .
History: STD36NH02L | CS4N65A4R | NCE60H10F | VS6880AT | BSS214N | AO4916L | SI4056DY
History: STD36NH02L | CS4N65A4R | NCE60H10F | VS6880AT | BSS214N | AO4916L | SI4056DY
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