APT4020BVFR Todos los transistores

 ..1. Size:375K  inchange semiconductor
 apt4020bvfr.pdf

isc N-Channel MOSFET Transistor APT4020BVFR FEATURES Drain Current I =23A@ T =25 D C Drain Source Voltage- V =400V(Min) DSS Static Drain-Source On-Resistance R =0.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 0.1. Size:72K  apt
 apt4020bvfrg.pdf

400V 23A 0.20 APT4020BVFR APT4020SVFR APT4020BVFRG* APT4020SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR FREDFET POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V SVF

 5.1. Size:64K  apt
 apt4020bvr.pdf

APT4020BVR 400V 23A 0.200 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 6.1. Size:51K  apt
 apt4020bn.pdf

D TO-247 G APT4020BN 400V 26.0A 0.20 S APT4025BN 400V 23.0A 0.25 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 4020BN 4025BN UNIT VDSS Drain-Source Voltage 400 400 Volts ID Continuous Drain Current @ TC = 25 C 26 23 Amps IDM Pulsed Drain Current 1 104 92